Микроэлектроника
Si-power high-voltage and GaN gate driver ICs
无锡硅动力微电子 / Si-power →Gate-driver микросхемы Si-power для high-voltage half-bridge MOS и high-speed GaN half-bridge applications.
Ключевые фишки
- ✓ High-voltage half-bridge drivers: SP6030F, SP6031FV, SP6034FV с high-side floating voltage до 650 V.
- ✓ GaN half-bridge drivers: SP6050CNA/CNB с 105 V high-side floating voltage и 10/3 ns rise/fall visible timings.
- ✓ SP6030F page показывает 600 V working voltage, 10-20 V gate-supply range, UVLO, 3.3/5/15 V logic support and 120 ns dead time.
Характеристики
Категория Микроэлектроника
Год 2026
Visible Series SP6030F; SP6031FV; SP6034FV; SP6050CNA; SP6050CNB
High Voltage Half Bridge up to 650 V visible table class
Gan Half Bridge 105 V visible table class
Packages SOP8; WLCSP
Источники
- {'type': 'pdf_page', 'ref': '无锡硅动力微电子股份有限公司_可搜索.pdf:44', 'note': 'High-voltage and GaN gate-driver page'}
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